A test structure employing a one-step lithography process has been built for measuring the complex impedance of ferroelectric capacitors at microwaves. The measurements are compared to the results of a finite element analysis with the aim of developing an electrical model of the test structure in which parasitic elements appear. These elements can be experimentally measured and partially de-embedded. The purpose of this paper is the characterization of strontium-bismuth tantalate (SBT) capacitors for microwave ICs or SoCs.
Test pattern for microwave dielectric properties of SrBi2Ta2O9 / Delmonte, N.; Watts, B. E.; Rosa, L.; Chiorboli, G.; Cova, P.; Menozzi, R.. - I:(2005), pp. 195-198. (Intervento presentato al convegno 2005 PhD Research in Microelectronics and Electronics Conference tenutosi a Lausanne, che nel 2005) [10.1109/RME.2005.1543044].
Test pattern for microwave dielectric properties of SrBi2Ta2O9
Rosa L.;
2005
Abstract
A test structure employing a one-step lithography process has been built for measuring the complex impedance of ferroelectric capacitors at microwaves. The measurements are compared to the results of a finite element analysis with the aim of developing an electrical model of the test structure in which parasitic elements appear. These elements can be experimentally measured and partially de-embedded. The purpose of this paper is the characterization of strontium-bismuth tantalate (SBT) capacitors for microwave ICs or SoCs.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
