We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the third direction. The materials are charged by field effect via planar countercharges. In this approach, we obtain electron-phonon matrix elements in which dimensionality and doping effects are inherently accounted for, without the need for post-processing corrections. This treatment highlights some unexpected consequences, such as an increase of electron-phonon coupling with doping in transition-metal dichalcogenides. We use symmetries extensively and identify pockets of relevant electronic states to minimize the number of electron-phonon interactions to compute; the integrodifferential Boltzmann transport equation is then linearized and solved beyond the relaxation-time approximation. We apply the entire protocol to a set of much studied materials with diverse electronic and vibrational band structures: electron-doped MoS2,WS2,WSe2, phosphorene, arsenene, and hole-doped phosphorene. Among these, hole-doped phosphorene is found to have the highest mobility, with a room temperature value around 600cm2V-1s-1. Last, we identify the factors that affect most phonon-limited mobilities, such as the number and the anisotropy of electron and hole pockets, to provide a broader understanding of the driving forces behind high mobilities in two-dimensional materials.

Mobility of two-dimensional materials from first principles in an accurate and automated framework / Sohier, T.; Campi, D.; Marzari, N.; Gibertini, M.. - In: PHYSICAL REVIEW MATERIALS. - ISSN 2475-9953. - 2:11(2018), pp. 114010-114030. [10.1103/PhysRevMaterials.2.114010]

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Gibertini M.
2018

Abstract

We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the third direction. The materials are charged by field effect via planar countercharges. In this approach, we obtain electron-phonon matrix elements in which dimensionality and doping effects are inherently accounted for, without the need for post-processing corrections. This treatment highlights some unexpected consequences, such as an increase of electron-phonon coupling with doping in transition-metal dichalcogenides. We use symmetries extensively and identify pockets of relevant electronic states to minimize the number of electron-phonon interactions to compute; the integrodifferential Boltzmann transport equation is then linearized and solved beyond the relaxation-time approximation. We apply the entire protocol to a set of much studied materials with diverse electronic and vibrational band structures: electron-doped MoS2,WS2,WSe2, phosphorene, arsenene, and hole-doped phosphorene. Among these, hole-doped phosphorene is found to have the highest mobility, with a room temperature value around 600cm2V-1s-1. Last, we identify the factors that affect most phonon-limited mobilities, such as the number and the anisotropy of electron and hole pockets, to provide a broader understanding of the driving forces behind high mobilities in two-dimensional materials.
2
11
114010
114030
Mobility of two-dimensional materials from first principles in an accurate and automated framework / Sohier, T.; Campi, D.; Marzari, N.; Gibertini, M.. - In: PHYSICAL REVIEW MATERIALS. - ISSN 2475-9953. - 2:11(2018), pp. 114010-114030. [10.1103/PhysRevMaterials.2.114010]
Sohier, T.; Campi, D.; Marzari, N.; Gibertini, M.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1200883
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