The mechanical effects of two etching treatments commonly applied on silicon wafers for the PV industry, are considered. The failure characteristics of this material under concentrated load are shown. In both cases, the maximum elongation and sustainable load of the etched wafers were measured to be higher than those of the original sample. The employed experimental procedure and results are presented here and a statistical data analysis substantiates the results observed. An attempt of explanation for this effect is offered based on the removal of a shallow highly defective layer induced by the etching of the material. © 2001 Elsevier Science B.V.

Mechanical effects of chemical etchings on monocrystalline silicon for photovoltaic use / Stefancich, M.; Butturi, M.; Vincenzi, D.; Martinelli, G.. - In: SOLAR ENERGY MATERIALS AND SOLAR CELLS. - ISSN 0927-0248. - 69:4(2001), pp. 371-377. [10.1016/S0927-0248(00)00407-4]

Mechanical effects of chemical etchings on monocrystalline silicon for photovoltaic use

Butturi M.;
2001

Abstract

The mechanical effects of two etching treatments commonly applied on silicon wafers for the PV industry, are considered. The failure characteristics of this material under concentrated load are shown. In both cases, the maximum elongation and sustainable load of the etched wafers were measured to be higher than those of the original sample. The employed experimental procedure and results are presented here and a statistical data analysis substantiates the results observed. An attempt of explanation for this effect is offered based on the removal of a shallow highly defective layer induced by the etching of the material. © 2001 Elsevier Science B.V.
2001
69
4
371
377
Mechanical effects of chemical etchings on monocrystalline silicon for photovoltaic use / Stefancich, M.; Butturi, M.; Vincenzi, D.; Martinelli, G.. - In: SOLAR ENERGY MATERIALS AND SOLAR CELLS. - ISSN 0927-0248. - 69:4(2001), pp. 371-377. [10.1016/S0927-0248(00)00407-4]
Stefancich, M.; Butturi, M.; Vincenzi, D.; Martinelli, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1186558
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