A novel prototype of low-power thick-film gas sensor deposited by screen-printing onto a micromachined hotplate is presented. The micro-heater is designed to maintain a film temperature of 400°C with less than 30 mW of input power. The fabrication process involves a combination of standard, VLSI-compatible, micromachining procedures and computer-aided screen-printing. A dielectric membrane of Si3N4 and SiO2 has been obtained with an embedded poly-Si resistor acting as a heating element. The bonding pad and contacts have been realised by a Ti/TiN/Cr/Au structure and the sensing film has been deposited by a screen-printing technique. Here follows a characterisation of a device, based on SnO2 sensing film, at working conditions together with the response curve for CH4 and NO2. We will also address some important improvements to the micro-hotplate structure, which leads to an increased flexibility of the device. © 2001 Elsevier Science B.V.
Low-power thick-film gas sensor obtained by a combination of screen printing and micromachining techniques / Vincenzi, D.; Butturi, M. A.; Stefancich, M.; Malagu, C.; Guidi, V.; Carotta, M. C.; Martinelli, G.; Guarnieri, V.; Brida, S.; Margesin, B.; Giacomozzi, F.; Zen, M.; Vasiliev, A. A.; Pisliakov, A. V.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 391:2(2001), pp. 288-292. (Intervento presentato al convegno 2nd InternationalSeminar on Semiconductor Gas Sensors tenutosi a Ustron, pol nel 2000) [10.1016/S0040-6090(01)00997-X].
Low-power thick-film gas sensor obtained by a combination of screen printing and micromachining techniques
Butturi M. A.;
2001
Abstract
A novel prototype of low-power thick-film gas sensor deposited by screen-printing onto a micromachined hotplate is presented. The micro-heater is designed to maintain a film temperature of 400°C with less than 30 mW of input power. The fabrication process involves a combination of standard, VLSI-compatible, micromachining procedures and computer-aided screen-printing. A dielectric membrane of Si3N4 and SiO2 has been obtained with an embedded poly-Si resistor acting as a heating element. The bonding pad and contacts have been realised by a Ti/TiN/Cr/Au structure and the sensing film has been deposited by a screen-printing technique. Here follows a characterisation of a device, based on SnO2 sensing film, at working conditions together with the response curve for CH4 and NO2. We will also address some important improvements to the micro-hotplate structure, which leads to an increased flexibility of the device. © 2001 Elsevier Science B.V.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
