It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate such as quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a Kohn-Sham-Dirac density-functional scheme that corrugations in a real sample are sufficient to determine electron-hole puddles on length scales that are larger than the spatial resolution of state-of-the-art scanning tunneling microscopy. © 2012 American Physical Society.
Electron-hole puddles in the absence of charged impurities / Gibertini, M.; Tomadin, A.; Guinea, F.; Katsnelson, M. I.; Polini, M.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 85:20(2012), pp. 201405-201409. [10.1103/PhysRevB.85.201405]
Electron-hole puddles in the absence of charged impurities
Gibertini M.;
2012
Abstract
It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate such as quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a Kohn-Sham-Dirac density-functional scheme that corrugations in a real sample are sufficient to determine electron-hole puddles on length scales that are larger than the spatial resolution of state-of-the-art scanning tunneling microscopy. © 2012 American Physical Society.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris