n this work, we report on the fabrication and characterization of organic light-emitting transistors (OLETs) within an indium–tin-oxide (ITO)-free platform, using graphene-based transparent conductive electrodes in place of ITO as gate electrode. A direct comparison between twin bottom-gate/top-contacts OLETs, where a standard ITO layer is replaced with a film made of a few graphene layers, shows that comparable electrical characteristics can be obtained along with a clear improvement in the electroluminescence generation characteristics. Our experimental findings pave the way to the exploitation of graphene-based transparent conductive electrodes within this class of emerging devices on flexible substrates, further promoting the novel era of flexible organic electronics.

ITO-Free Organic Light-Emitting Transistors with Graphene Gate Electrode / Soldano, C; Stefani, A; Biondo, V; Basiricò, L; Turatti, G; Generali, G; Ortolani, L; Morandi, V; Veronese, G P; Rizzoli, R; Capelli, R; Muccini, M. - In: ACS PHOTONICS. - ISSN 2330-4022. - 1:10(2014), pp. 1082-1088. [10.1021/ph500289s]

ITO-Free Organic Light-Emitting Transistors with Graphene Gate Electrode

Capelli R;
2014

Abstract

n this work, we report on the fabrication and characterization of organic light-emitting transistors (OLETs) within an indium–tin-oxide (ITO)-free platform, using graphene-based transparent conductive electrodes in place of ITO as gate electrode. A direct comparison between twin bottom-gate/top-contacts OLETs, where a standard ITO layer is replaced with a film made of a few graphene layers, shows that comparable electrical characteristics can be obtained along with a clear improvement in the electroluminescence generation characteristics. Our experimental findings pave the way to the exploitation of graphene-based transparent conductive electrodes within this class of emerging devices on flexible substrates, further promoting the novel era of flexible organic electronics.
2014
1
10
1082
1088
ITO-Free Organic Light-Emitting Transistors with Graphene Gate Electrode / Soldano, C; Stefani, A; Biondo, V; Basiricò, L; Turatti, G; Generali, G; Ortolani, L; Morandi, V; Veronese, G P; Rizzoli, R; Capelli, R; Muccini, M. - In: ACS PHOTONICS. - ISSN 2330-4022. - 1:10(2014), pp. 1082-1088. [10.1021/ph500289s]
Soldano, C; Stefani, A; Biondo, V; Basiricò, L; Turatti, G; Generali, G; Ortolani, L; Morandi, V; Veronese, G P; Rizzoli, R; Capelli, R; Muccini, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1176692
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