We performed constant voltage stress on oligothiophene-based p- and n-type organic thin-film-transistors, in the accumulation regime. The stress induced charge trapping, mobility degradation and defect generation. The specific kinetics depends not only on the applied bias value and polarity, but also on the semiconductor type. Stress on PMMA capacitors (without the semiconductor film) revealed that most of the degradation is largely originated by the interaction with the semiconductor layer, which enhances charge injection

Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric / Wrachien, N; Cester, A; Bari, D; Capelli, R; D’Alpaos, R; Muccini, M; Stefani, A; Turatti, G; Meneghesso, G. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 53(2013), pp. 1798-1803.

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