We performed constant voltage stress on oligothiophene-based p- and n-type organic thin-film-transistors, in the accumulation regime. The stress induced charge trapping, mobility degradation and defect generation. The specific kinetics depends not only on the applied bias value and polarity, but also on the semiconductor type. Stress on PMMA capacitors (without the semiconductor film) revealed that most of the degradation is largely originated by the interaction with the semiconductor layer, which enhances charge injection

Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric / Wrachien, N; Cester, A; Bari, D; Capelli, R; D’Alpaos, R; Muccini, M; Stefani, A; Turatti, G; Meneghesso, G. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 53:9-11(2013), pp. 1798-1803. [10.1016/j.microrel.2013.07.085]

Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric

Capelli R;
2013

Abstract

We performed constant voltage stress on oligothiophene-based p- and n-type organic thin-film-transistors, in the accumulation regime. The stress induced charge trapping, mobility degradation and defect generation. The specific kinetics depends not only on the applied bias value and polarity, but also on the semiconductor type. Stress on PMMA capacitors (without the semiconductor film) revealed that most of the degradation is largely originated by the interaction with the semiconductor layer, which enhances charge injection
2013
53
9-11
1798
1803
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric / Wrachien, N; Cester, A; Bari, D; Capelli, R; D’Alpaos, R; Muccini, M; Stefani, A; Turatti, G; Meneghesso, G. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 53:9-11(2013), pp. 1798-1803. [10.1016/j.microrel.2013.07.085]
Wrachien, N; Cester, A; Bari, D; Capelli, R; D’Alpaos, R; Muccini, M; Stefani, A; Turatti, G; Meneghesso, G
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1176673
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 8
  • ???jsp.display-item.citation.isi??? 8
social impact