In this paper, we investigate the trapping effects, of iron doped AlGaN/GaN HEMTs, before and after on-wafer 24 hour RF stress test. First, we study the trap centers responsible of the current collapse at different on-state bias and temperature conditions. Second, we investigate 24 hour RF stress effect on the trapping kinetics. By filling traps under off-state condition with high drain-source voltage, we have identified two prominent traps labelled E 1 and E 2 with activation energies of 0.7 eV and 0.6 eV under the conduction band, respectively. An increase of the amplitude of the trap centers E 1 and E 2 by 22.9% and 15.8% respectively is noticed during the RF stress. This result suggests that the degradation observed during RF stress might have induced a density increase of the traps involved in the E 1 and E 2 trap signatures responsible on the current collapse.

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs / Rzin, M.; Chini, A.; De Santi, C.; Meneghini, M.; Hugger, A.; Hollmer, M.; Stieglauer, H.; Madel, M.; Splettstößer, J.; Sommer, D.; Grünenpütt, J.; Beilenhoff, K.; Blanck, H.; Chen, J. -T.; Kordina, O.; Meneghesso, G.; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 88-90:(2018), pp. 397-401. [10.1016/j.microrel.2018.07.122]

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Chini, A.;
2018

Abstract

In this paper, we investigate the trapping effects, of iron doped AlGaN/GaN HEMTs, before and after on-wafer 24 hour RF stress test. First, we study the trap centers responsible of the current collapse at different on-state bias and temperature conditions. Second, we investigate 24 hour RF stress effect on the trapping kinetics. By filling traps under off-state condition with high drain-source voltage, we have identified two prominent traps labelled E 1 and E 2 with activation energies of 0.7 eV and 0.6 eV under the conduction band, respectively. An increase of the amplitude of the trap centers E 1 and E 2 by 22.9% and 15.8% respectively is noticed during the RF stress. This result suggests that the degradation observed during RF stress might have induced a density increase of the traps involved in the E 1 and E 2 trap signatures responsible on the current collapse.
2018
88-90
397
401
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs / Rzin, M.; Chini, A.; De Santi, C.; Meneghini, M.; Hugger, A.; Hollmer, M.; Stieglauer, H.; Madel, M.; Splettstößer, J.; Sommer, D.; Grünenpütt, J.; Beilenhoff, K.; Blanck, H.; Chen, J. -T.; Kordina, O.; Meneghesso, G.; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 88-90:(2018), pp. 397-401. [10.1016/j.microrel.2018.07.122]
Rzin, M.; Chini, A.; De Santi, C.; Meneghini, M.; Hugger, A.; Hollmer, M.; Stieglauer, H.; Madel, M.; Splettstößer, J.; Sommer, D.; Grünenpütt, J.; Beilenhoff, K.; Blanck, H.; Chen, J. -T.; Kordina, O.; Meneghesso, G.; Zanoni, E.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1175273
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