The interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman measurements of non-equilibrium phonons in GaAs/AlAs structures show strong coupling to AlAs interface modes, in good agreement with theoretical predictions based on a microscopic phonon model. Monte Carlo simulations of time-resolved Raman measurements of interface phonons in GaAs/AlGaAs structures provide further confirmation of this result.
INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS/ALAS AND GAAS/ALGAAS HETEROSTRUCTURES / P., L., Bordone, P., Molinari, E., H., R., A. M., D.P., A. C., M., J. F., R., M., S.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 7:(1992), pp. B116-B119. [10.1088/0268-1242/7/3B/025]
INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS/ALAS AND GAAS/ALGAAS HETEROSTRUCTURES
BORDONE, Paolo;MOLINARI, Elisa;
1992
Abstract
The interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman measurements of non-equilibrium phonons in GaAs/AlAs structures show strong coupling to AlAs interface modes, in good agreement with theoretical predictions based on a microscopic phonon model. Monte Carlo simulations of time-resolved Raman measurements of interface phonons in GaAs/AlGaAs structures provide further confirmation of this result.
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