本公开的实施例涉及一种高电子迁移率晶体管HEMT器件。该HEMT器件包括：半导体主体，包括异质结结构；在半导体主体上的电介质层；栅极电极；漏极电极，面向栅极电极的第一侧；和源极电极，面向栅极电极的与第一侧相对的第二侧；辅助沟道层，其在异质结结构之上在栅极电极与漏极电极之间延伸，与漏极电极电接触并且与栅极电极相距一定距离，并且形成用于在源极电极与漏极电极之间流动的电荷载流子的附加导电路径。

Embodiment of the disclosure is related to a kind of high electron mobility transistor (HEMT) device.The HEMT device includes：Semiconductor body, including heterojunction structure；Dielectric layer on semiconductor body；Gate electrode；Drain electrode, towards the first side of gate electrode；And source electrode, towards second side relative with the first side of gate electrode；Assist gallery layer, it extends on heterojunction structure between gate electrode and drain electrode, make electrical contact with and be separated by a certain distance with gate electrode with drain electrode, and form the additional conductive path of the electric charge carrier for being flowed between source electrode and drain electrode.

高电子迁移率晶体管hemt器件 / Iucolano, Ferdinando; CHINI, Alessandro. - (2016 Nov 25).

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