单个或多个栅极场板的制造

一种制造单个或多个栅极场板的方法，其利用了下列连续步骤：在场效应晶体管表面上进行介电材料沉积/生长、介电材料蚀刻以及金属蒸镀。由于介电材料沉积/生长是一种充分可控的处理，因此这种制造方法允许对场板工作进行严格控制。而且，沉积在器件表面上的介电材料无需从器件本征区中去除：这实质上使得无需低损伤介电材料干法/湿法蚀刻便能实现场板器件。使用多个栅极场板还通过多个连接来减少栅极电阻，从而改善了大周边和/或亚微米栅器件的性能。

A kind of method of making single or multiple grid field plates, it has utilized following consecutive steps: carry out dielectric deposition/growth, dielectric material etching and metal evaporation on the field-effect transistor surface.Because dielectric deposition/growth is a kind of fully controlled processing, therefore this manufacture method allows strictness control is carried out in field plate work.And the dielectric material that is deposited on the device surface need not to remove from device intrinsic: this makes that in fact need not the etching of low damage dielectric material dry/wet just can realize field plate device.Use a plurality of grid field plates also to reduce resistance, thereby improved the performance of big periphery and/or submicron gate device by a plurality of connections.