EnglishWritten from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results.
Nanoscale MOS Transistors: Semi-Classical Transport and Applications / Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2011), pp. 1-470. [10.1017/CBO9780511973857]
| Data di pubblicazione: | 2011 | |
| Titolo: | Nanoscale MOS Transistors: Semi-Classical Transport and Applications | |
| Autore/i: | Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Autore/i UNIMORE: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1017/CBO9780511973857 | |
| ISBN: | 978-0521516846 | |
| Editore: | Cambridge University Press | |
| Citazione: | Nanoscale MOS Transistors: Semi-Classical Transport and Applications / Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2011), pp. 1-470. [10.1017/CBO9780511973857] | |
| Tipologia | Monografia/Trattato scientifico |
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