We report experimental PL2,3VV Auger line shapes of as-cleaved GaP(110) and InP(110) surfaces and of the relative Sb p(1 x 1) interfaces along with calculated slab-resolved densities of states (DOS). The joint experimental and theoretical analysis allows us to disentangle the surface-specific PL2,3VV contribution from the total signal of the as-cleaved surfaces.
QUENCHING THE SURFACE ELECTRONIC-STRUCTURE OF P-CONTAINING-III-V SEMICONDUCTORS VIA ORDERED (1X1) SB OVERLAYERS - A PL2,3VV AUGER LINE-SHAPE ANALYSIS / Sancrotti, M; Duo, L; Calliari, L; Marchetti, F; Cosso, R; Weightman, P; Manghi, Franca. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 270:(1992), pp. 838-843.
QUENCHING THE SURFACE ELECTRONIC-STRUCTURE OF P-CONTAINING-III-V SEMICONDUCTORS VIA ORDERED (1X1) SB OVERLAYERS - A PL2,3VV AUGER LINE-SHAPE ANALYSIS
MANGHI, Franca
1992
Abstract
We report experimental PL2,3VV Auger line shapes of as-cleaved GaP(110) and InP(110) surfaces and of the relative Sb p(1 x 1) interfaces along with calculated slab-resolved densities of states (DOS). The joint experimental and theoretical analysis allows us to disentangle the surface-specific PL2,3VV contribution from the total signal of the as-cleaved surfaces.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris