Wide-bandgap power switches, based on SiC and GaN, are emerging on the semiconductor market. Standard resistor drivers are insufficient to exploit all the advantages of these new devices. Fine control over current and voltage waveforms during switching, equivalent on-state resistance and immunity to noisy environments, demand the development of dedicated drivers. This study aims at determining a suitable control topology for the gate (or base) terminal of the power device, in order to enact regulation of the switching waveforms and performances. Four different topologies, both open- and closed-loop are simulated, examined, and compared with the standard resistor driver.
Comparing control topologies for wide-bandgap power-device drivers: A simulation study / Soldati, Alessandro; Barater, Davide; Concari, Carlo; Franceschini, Giovanni. - (2015), pp. 2469-2474. (Intervento presentato al convegno 41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 tenutosi a Pacifico Yokohama, jpn nel 2015) [10.1109/IECON.2015.7392473].
Comparing control topologies for wide-bandgap power-device drivers: A simulation study
Barater, Davide;Franceschini, Giovanni
2015
Abstract
Wide-bandgap power switches, based on SiC and GaN, are emerging on the semiconductor market. Standard resistor drivers are insufficient to exploit all the advantages of these new devices. Fine control over current and voltage waveforms during switching, equivalent on-state resistance and immunity to noisy environments, demand the development of dedicated drivers. This study aims at determining a suitable control topology for the gate (or base) terminal of the power device, in order to enact regulation of the switching waveforms and performances. Four different topologies, both open- and closed-loop are simulated, examined, and compared with the standard resistor driver.
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