The transport scaling limits of Ovonic devices are studied by means of a numerical solution of a time- and space-dependent transport models based on a set of equations that provide a good physical grasp of the microscopic process at hand. The predictivity of the approach has been confirmed through the comparison with recent experimental results where the parasitic effects have been reduced by the use of top-technology measuring equipments. The present analysis is performed for the AgInSbTe chalcogenide, since this material exibits a steep threshold-switching dynamics which makes it promising for high-speed non-volatile memory applications.

Transport scaling limits of ovonic Devices: a simulative approach / Jacoboni, Carlo; Piccinini, Enrico; Brunetti, Rossella; Rudan, Massimo. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6588. - 906:1(2017), pp. 0120051-0120054. (Intervento presentato al convegno 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2017 tenutosi a Hyatt Regency Hotel and Conference Center, usa nel 2017) [10.1088/1742-6596/906/1/012005].

Transport scaling limits of ovonic Devices: a simulative approach

Jacoboni Carlo
Methodology
;
Piccinini Enrico
Data Curation
;
Brunetti Rossella
Formal Analysis
;
2017

Abstract

The transport scaling limits of Ovonic devices are studied by means of a numerical solution of a time- and space-dependent transport models based on a set of equations that provide a good physical grasp of the microscopic process at hand. The predictivity of the approach has been confirmed through the comparison with recent experimental results where the parasitic effects have been reduced by the use of top-technology measuring equipments. The present analysis is performed for the AgInSbTe chalcogenide, since this material exibits a steep threshold-switching dynamics which makes it promising for high-speed non-volatile memory applications.
2017
20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2017
Hyatt Regency Hotel and Conference Center, usa
2017
906
0120051
0120054
Jacoboni, Carlo; Piccinini, Enrico; Brunetti, Rossella; Rudan, Massimo
Transport scaling limits of ovonic Devices: a simulative approach / Jacoboni, Carlo; Piccinini, Enrico; Brunetti, Rossella; Rudan, Massimo. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6588. - 906:1(2017), pp. 0120051-0120054. (Intervento presentato al convegno 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2017 tenutosi a Hyatt Regency Hotel and Conference Center, usa nel 2017) [10.1088/1742-6596/906/1/012005].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1152778
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