A code to calculate the anisotropic elastic properties in a silicon or germanium crystal is introduced. The program, namedAniCryDe, allows the user to select the crystallographic configuration of interest. For the selected crystallographic orientation,AniCryDecalculates several key mechanical parameters, such as Young’s modulus, Poisson’s ratio and the shear modulus. Furthermore, the program displays both the compliance and the stiffness tensors concerning the crystallographic orientation of interest. The code enables the user to set several parameters through a user-friendly control stage. As a result, the user obtains the complete displacement field of a deformed crystal and the curvature of any crystallographic plane. Manufacturing wafer defects such as miscut and misflat angle are also taken into account.

AniCryDe: calculation of elastic properties in silicon and germanium crystals / Camattari, R.; Lanzoni, L.; Bellucci, V.; Guidi, V.. - In: JOURNAL OF APPLIED CRYSTALLOGRAPHY. - ISSN 0021-8898. - 48:(2015), pp. 943-949. [10.1107/S1600576715005087]

AniCryDe: calculation of elastic properties in silicon and germanium crystals

Lanzoni L.;
2015

Abstract

A code to calculate the anisotropic elastic properties in a silicon or germanium crystal is introduced. The program, namedAniCryDe, allows the user to select the crystallographic configuration of interest. For the selected crystallographic orientation,AniCryDecalculates several key mechanical parameters, such as Young’s modulus, Poisson’s ratio and the shear modulus. Furthermore, the program displays both the compliance and the stiffness tensors concerning the crystallographic orientation of interest. The code enables the user to set several parameters through a user-friendly control stage. As a result, the user obtains the complete displacement field of a deformed crystal and the curvature of any crystallographic plane. Manufacturing wafer defects such as miscut and misflat angle are also taken into account.
2015
48
943
949
AniCryDe: calculation of elastic properties in silicon and germanium crystals / Camattari, R.; Lanzoni, L.; Bellucci, V.; Guidi, V.. - In: JOURNAL OF APPLIED CRYSTALLOGRAPHY. - ISSN 0021-8898. - 48:(2015), pp. 943-949. [10.1107/S1600576715005087]
Camattari, R.; Lanzoni, L.; Bellucci, V.; Guidi, V.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1151810
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