A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system. © 2014 IEEE.
Performance analysis of UniTL-H6 inverter with SiC MOSFETs / Barater, Davide; Buticchi, Giampaolo; Concari, Carlo; Franceschini, Giovanni; Gurpinar, Emre; De, Dipankar; Castellazzi, Alberto. - (2014), pp. 433-439. (Intervento presentato al convegno 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 tenutosi a Hiroshima, jpn nel 2014) [10.1109/IPEC.2014.6869619].
Performance analysis of UniTL-H6 inverter with SiC MOSFETs
Barater, Davide;Franceschini, Giovanni;
2014
Abstract
A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system. © 2014 IEEE.
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