Conical holes bored in the active layer of a thin-film silicon solar cell by ion-beam lithography (IBL) show increase of effective optical absorption in the underlying silicon active layer. The optical properties are numerically simulated by the 3D finite-difference time-domain method (3D-FDTD), showing wideband increase of the UV, visible, and IR quantum efficiency. An experimental fabrication procedure is developed using IBL for high wide-area repeatability. A further optimization on the cone shapes is performed in order to make fabrication feasible with plasma etching techniques.
Ion-beam and plasma etching of a conical-pores photonic crystal for thin-film solar cell / Gervinskas, Gediminas; Rosa, Lorenzo; Juodkazis, Saulius. - 8923:(2013), pp. 89232G-89232G. (Intervento presentato al convegno Micro/Nano Materials, Devices, and Systems tenutosi a Melbourne, VIC; Australia nel 9 December 2013 through 11 December 2013) [10.1117/12.2033762].
Ion-beam and plasma etching of a conical-pores photonic crystal for thin-film solar cell
ROSA, Lorenzo;
2013
Abstract
Conical holes bored in the active layer of a thin-film silicon solar cell by ion-beam lithography (IBL) show increase of effective optical absorption in the underlying silicon active layer. The optical properties are numerically simulated by the 3D finite-difference time-domain method (3D-FDTD), showing wideband increase of the UV, visible, and IR quantum efficiency. An experimental fabrication procedure is developed using IBL for high wide-area repeatability. A further optimization on the cone shapes is performed in order to make fabrication feasible with plasma etching techniques.
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