The surface- and anion-specific valence-band states of heteropolar P containing III-V semiconductors [GaP(110) and InP(110)] have been determined by analysis of the Auger P L2,3 VV line shape of the ascleaved samples and the well-ordered epitaxial Sb-covered interfaces. The experimental spectra are analyzed in terms of slab-resolved partial density-of-states calculations performed for different surface structural models.
ANION-SPECIFIC SURFACE VALENCE-BAND STATES IN HETEROPOLAR SEMICONDUCTORS - THE CASE OF GAP(110) AND INP(110) / SANCROTTI, M; DUO, L; CALLIARI, L; MANGHI, Franca; COSSO, R; WEIGHTMAN, P.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 46:(1992), pp. 13607-13610.
ANION-SPECIFIC SURFACE VALENCE-BAND STATES IN HETEROPOLAR SEMICONDUCTORS - THE CASE OF GAP(110) AND INP(110)
MANGHI, Franca;
1992
Abstract
The surface- and anion-specific valence-band states of heteropolar P containing III-V semiconductors [GaP(110) and InP(110)] have been determined by analysis of the Auger P L2,3 VV line shape of the ascleaved samples and the well-ordered epitaxial Sb-covered interfaces. The experimental spectra are analyzed in terms of slab-resolved partial density-of-states calculations performed for different surface structural models.
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