A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based on amorphous materials.
Closed-form transition rate in hopping conduction / Piccinini, Enrico; Rudan, Massimo; Brunetti, Rossella. - STAMPA. - 124372:(2016), pp. 315-318. (Intervento presentato al convegno 46th European Solid-State Device Research Conference, ESSDERC 2016 tenutosi a Lausanne; Switzerland nel 12 September 2016 through 15 September 2016) [10.1109/ESSDERC.2016.7599649].
Closed-form transition rate in hopping conduction
BRUNETTI, Rossella
2016
Abstract
A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based on amorphous materials.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
