alpha-Sexithiophene (6T) ultrathin films have been grown on CaF2(111)/Si(111) planar surfaces and on CaF2(110)/Si(001) ridged surfaces by molecular beam epitaxy. The growth mode has been studied by means of atomic force microscopy (AFM), photoemission, and near edge X-ray absorption fine structure (NEXAFS). AFM reveals a substantial difference in the film morphology on the two substrates: on CaF2(111) large islands with flat terraces form with no in-plane preferential growth direction; on CaF2(110) narrow and elongated islands develop following the substrate corrugation. Photoemission and X-ray absorption at Ca L-2,L-3 and F K edges indicate that the interaction with the substrate is negligible. Near-edge X-ray absorption (NEXAFS) flanked by DFT calculations of the angular-resolved absorption cross section of 6T at the carbon K-edge reveal that the molecules on both substrates have their long axis vertically oriented with respect to the substrate plane. In addition, in-plane anisotropy of the molecular orientation has been observed on CaF2(110), and it has been interpreted in terms of well aligned molecules in the elongated islands.

Controlling In-Plane Isotropic and Anisotropic Orientation of Organic Semiconductor Molecules on Ionic Fluoride Dielectrics / Jiang, Tingming; Koshmak, Konstantin; Giglia, Angelo; Banshchikov, Alexander; Sokolov, Nikolai S.; Dinelli, Franco; Capelli, Raffaella; Pasquali, Luca. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - 121:8(2017), pp. 4426-4433. [10.1021/acs.jpcc.6b12926]

Controlling In-Plane Isotropic and Anisotropic Orientation of Organic Semiconductor Molecules on Ionic Fluoride Dielectrics

JIANG, TINGMING;Capelli, Raffaella;PASQUALI, Luca
2017

Abstract

alpha-Sexithiophene (6T) ultrathin films have been grown on CaF2(111)/Si(111) planar surfaces and on CaF2(110)/Si(001) ridged surfaces by molecular beam epitaxy. The growth mode has been studied by means of atomic force microscopy (AFM), photoemission, and near edge X-ray absorption fine structure (NEXAFS). AFM reveals a substantial difference in the film morphology on the two substrates: on CaF2(111) large islands with flat terraces form with no in-plane preferential growth direction; on CaF2(110) narrow and elongated islands develop following the substrate corrugation. Photoemission and X-ray absorption at Ca L-2,L-3 and F K edges indicate that the interaction with the substrate is negligible. Near-edge X-ray absorption (NEXAFS) flanked by DFT calculations of the angular-resolved absorption cross section of 6T at the carbon K-edge reveal that the molecules on both substrates have their long axis vertically oriented with respect to the substrate plane. In addition, in-plane anisotropy of the molecular orientation has been observed on CaF2(110), and it has been interpreted in terms of well aligned molecules in the elongated islands.
2017
121
8
4426
4433
Controlling In-Plane Isotropic and Anisotropic Orientation of Organic Semiconductor Molecules on Ionic Fluoride Dielectrics / Jiang, Tingming; Koshmak, Konstantin; Giglia, Angelo; Banshchikov, Alexander; Sokolov, Nikolai S.; Dinelli, Franco; Capelli, Raffaella; Pasquali, Luca. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - 121:8(2017), pp. 4426-4433. [10.1021/acs.jpcc.6b12926]
Jiang, Tingming; Koshmak, Konstantin; Giglia, Angelo; Banshchikov, Alexander; Sokolov, Nikolai S.; Dinelli, Franco; Capelli, Raffaella; Pasquali, Luca...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1132027
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