Phonon frequencies and potentials for an array of thin rectangular GaAs wires embedded in AlAs are calculated within a microscopic scheme. The confined and interface character of optical modes are clearly evident from their dispersion and from the spatial profiles. Our results allow us to conclude that macroscopic models based on the dielectric continuum scheme are adequate to describe confined phonon profiles at wave vectors relevant to el-ph scattering, in contrast with approaches based on mechanical boundary conditions, which yield modes with the wrong symmetry sequence. The implications for electron-phonon scattering rates are discussed.

PHONONS IN THIN GAAS QUANTUM WIRES / Rossi, F; Rota, L; Bungaro, C; Lugli, P; Molinari, Elisa. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 47:(1993), pp. 1695-1698.

PHONONS IN THIN GAAS QUANTUM WIRES

MOLINARI, Elisa
1993

Abstract

Phonon frequencies and potentials for an array of thin rectangular GaAs wires embedded in AlAs are calculated within a microscopic scheme. The confined and interface character of optical modes are clearly evident from their dispersion and from the spatial profiles. Our results allow us to conclude that macroscopic models based on the dielectric continuum scheme are adequate to describe confined phonon profiles at wave vectors relevant to el-ph scattering, in contrast with approaches based on mechanical boundary conditions, which yield modes with the wrong symmetry sequence. The implications for electron-phonon scattering rates are discussed.
1993
47
1695
1698
PHONONS IN THIN GAAS QUANTUM WIRES / Rossi, F; Rota, L; Bungaro, C; Lugli, P; Molinari, Elisa. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 47:(1993), pp. 1695-1698.
Rossi, F; Rota, L; Bungaro, C; Lugli, P; Molinari, Elisa
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/11319
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