The improvement in the access resistance and the linearity of AlGaN/GaN HEMTs with the use of high conductivity modulation doped AlGaN/GaN multichannel heterostructures was discussed. The sheet conductivity and contact resistance of each individual channel of the heterostructures were determined from the measurement of TLM structures with different recess patterns. The electrical properties of the structures were modeled using an equivalent electrical circuit. The use of heterostructures had resulted in the reduction of access resistance and increase in the linearity of the HEMTs, and thus also allowed improvement of their DC and rf characteristics.
Use of multichannel heterostructures to improve the access resistance and f T linearity in GaN-based HEMTs / Palacios, T; Chini, Alessandro; Buttari, D.; Heikman, S.; Keller, S.; Denbaars, S. P.; Mishra, U. K.. - (2004), pp. 41-42. (Intervento presentato al convegno Device Research Conference - Conference Digest, 62nd DRC tenutosi a Notre Dame, IN, USA nel 21-23 June 2004) [10.1109/DRC.2004.1367774].
Use of multichannel heterostructures to improve the access resistance and f T linearity in GaN-based HEMTs
CHINI, Alessandro;
2004
Abstract
The improvement in the access resistance and the linearity of AlGaN/GaN HEMTs with the use of high conductivity modulation doped AlGaN/GaN multichannel heterostructures was discussed. The sheet conductivity and contact resistance of each individual channel of the heterostructures were determined from the measurement of TLM structures with different recess patterns. The electrical properties of the structures were modeled using an equivalent electrical circuit. The use of heterostructures had resulted in the reduction of access resistance and increase in the linearity of the HEMTs, and thus also allowed improvement of their DC and rf characteristics.Pubblicazioni consigliate
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