The planar and recessed gate devices were fabricated and compared for their linearity characteristics. AlGaN/GaN heterostructures were formed using a 290 Å thick Al 0.22Ga0.78N barrier layer on sapphire substrate. Gate recessing has been proven to be a viable solution to improve device linearity characteristics. It is observed that further optimization of gate recessing may results in higher efficiency operation while maintaining low distortion level.
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs / Chini, Alessandro; Buttari, D.; Coffie, R.; Shen, L.; Palacios, T.; Heikman, S.; Chakraborty, A.; Keller, S.; Mishra, U. K.. - (2004), pp. 33-34. (Intervento presentato al convegno Device Research Conference - Conference Digest, 62nd DRC tenutosi a Notre Dame, IN, USA nel 21-23 June 2004) [10.1109/DRC.2004.1367770].
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs
CHINI, Alessandro;
2004
Abstract
The planar and recessed gate devices were fabricated and compared for their linearity characteristics. AlGaN/GaN heterostructures were formed using a 290 Å thick Al 0.22Ga0.78N barrier layer on sapphire substrate. Gate recessing has been proven to be a viable solution to improve device linearity characteristics. It is observed that further optimization of gate recessing may results in higher efficiency operation while maintaining low distortion level.
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