The hole multiplication factor in pnp In0.52Al0.48As/In0.53G0.47As single heterojunction bipolar transistors (HBT's) has been measured as a function of the base-collector bias. Hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature.
Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's / Buttari, D; Chini, Alessandro; Meneghesso, G.; Zanoni, E.; Sawdai, D.; Pavlidis, D.; Hsu, S. S. H.. - (2000), pp. 258-261. (Intervento presentato al convegno 2000 International Conference on Indium Phosphide and Related Materials tenutosi a Williamsburg, VA, USA, nel 2000) [10.1109/ICIPRM.2000.850281].
Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's
CHINI, Alessandro;
2000
Abstract
The hole multiplication factor in pnp In0.52Al0.48As/In0.53G0.47As single heterojunction bipolar transistors (HBT's) has been measured as a function of the base-collector bias. Hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature.
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