Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or Silicon Carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.
Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes / Meneghesso, G.; Chini, Alessandro; Maschietto, A.; Zanoni, E.; Malberti, P.; Ciappa, M.. - 2001:(2001), pp. 247-252. (Intervento presentato al convegno Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001 tenutosi a Portland; United States nel 11-13 September 2001).
Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes
CHINI, Alessandro;
2001
Abstract
Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or Silicon Carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.Pubblicazioni consigliate
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