A low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented by also focusing on the device performances evaluated by means of experimental measurments.
Very high power low-cost field-plate GaAs PHEMTs for X-band applications / Ghione, G.; Lanzieri, C.; Peroni, M.; Lavanga, S.; Chini, Alessandro; Verzellesi, Giovanni; Camarchia, V.; Cappelluti, F.; Angelini, A.; Limiti, E.; Serino, A.. - (2006), pp. 15-18. (Intervento presentato al convegno TARGET-DAY 2006 tenutosi a Villa Mondragone, Monte Porzio Catone, Italy nel 16-18 October 2006).
Very high power low-cost field-plate GaAs PHEMTs for X-band applications
CHINI, Alessandro;VERZELLESI, Giovanni;
2006
Abstract
A low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented by also focusing on the device performances evaluated by means of experimental measurments.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
