Record performance at 4GHz has been obtained by using field plated AIGaN/GaN HEMTs. For devices on sapphire substrate, high power density (12W/mm) as well as high efficiency (58%) have been measured. Devices on Sic substrate yielded power density up to I8.8W/mm and efficiency up to 74% (with 6Whm). Excellent linearity performance was also achieved: while maintaining a carrier to third-order intermodulation ratio of 30dBc device yielded 2.4W/mm with 53% PAE.
High performance AlGaN/GaN HEMTs with a field plated gate structure / Chini, Alessandro; Buttari, D.; Coffie, R.; Shen, L.; Heikman, S.; Chakraborty, A.; Keller, S.; Mishra, U. K.. - (2003), pp. 434-435. (Intervento presentato al convegno International Semiconductor Device Research Symposium, ISDRS 2003 tenutosi a Holiday Inn Georgetown, (USA) nel 10-12 Dec. 2003) [10.1109/ISDRS.2003.1272169].
High performance AlGaN/GaN HEMTs with a field plated gate structure
CHINI, Alessandro;
2003
Abstract
Record performance at 4GHz has been obtained by using field plated AIGaN/GaN HEMTs. For devices on sapphire substrate, high power density (12W/mm) as well as high efficiency (58%) have been measured. Devices on Sic substrate yielded power density up to I8.8W/mm and efficiency up to 74% (with 6Whm). Excellent linearity performance was also achieved: while maintaining a carrier to third-order intermodulation ratio of 30dBc device yielded 2.4W/mm with 53% PAE.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris