In this paper we report a reliability study of optimized AlGaN/GaN HEMTs submitted to high bias voltages. In these devices, thanks to the improved epilayers structures, gate Field Plate and GaN cap layer, no significant degradation has been observed after drain-gate biased up to 200 V. Three SiC substrates have been adopted, with different quality properties, and unexpected high device robustness has been observed in all three wafers.
High Robustness GaN HEMT Subject to Reverse Bias Stress / Stocco, A.; Ronchi, N.; Chini, Alessandro; Nilsson, P. A.; Meneghesso, G.; Zanoni, E.. - (2010), pp. 205-206. (Intervento presentato al convegno 34th Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE 2010 tenutosi a Darmstadt/Seeheim, Germany nel May 16-19, 2010).
High Robustness GaN HEMT Subject to Reverse Bias Stress
CHINI, Alessandro;
2010
Abstract
In this paper we report a reliability study of optimized AlGaN/GaN HEMTs submitted to high bias voltages. In these devices, thanks to the improved epilayers structures, gate Field Plate and GaN cap layer, no significant degradation has been observed after drain-gate biased up to 200 V. Three SiC substrates have been adopted, with different quality properties, and unexpected high device robustness has been observed in all three wafers.
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