The time evolution of current and voltage in Ovonicswitching devices is affected, on one side, by parasitic elements due to contacts and connectors and, on the other one, by the internal-relaxation mechanisms of the material itself. The two aspects, respectively termed here “intrinsic” and “extrinsic” dynamics, are investigated in this paper on the basis of the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices.
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices / Buscemi, Fabrizio; Piccinini, Enrico; Brunetti, Rossella; Rudan, Massimo. - STAMPA. - (2015), pp. 429-432. ((Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Washington (USA) nel September 9-11, 2015 [10.1109/SISPAD.2015.7292352].
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices
BUSCEMI, Fabrizio;BRUNETTI, Rossella;
2015-01-01
Abstract
The time evolution of current and voltage in Ovonicswitching devices is affected, on one side, by parasitic elements due to contacts and connectors and, on the other one, by the internal-relaxation mechanisms of the material itself. The two aspects, respectively termed here “intrinsic” and “extrinsic” dynamics, are investigated in this paper on the basis of the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices.
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