The problem of thin elastic films bonded on an elastic orthotropic substrate under thermal load is investigated in this work. Differently from past studies on the same topic, the effects induced by anisotropic behavior of the elastic substrate will be taken into account. Particular attention will also be paid to the determination of the displacement and stress fields induced by thermal loading. In particular, it is assumed that the thin films are deposed on the substrate at high temperature, and then the mismatch occurring during the cooling process, due to the difference between the thermal expansion coefficients of the two materials, is responsible for the permanent deformation assumed by the system. This phenomenon can be exploited for realizing a crystalline undulator. To this aim, the permanent deformation must be optimized in order to encourage the channeling phenomenon. By imposing equilibrium conditions and perfect adhesion between the film and the substrate, a singular integral equation is derived. A closed-form solution is achieved by expanding the interfacial shear stress fields in Chebyshev series. The unknown coefficients in the series expansion are then determined by transforming the integral equation into an infinite algebraic system.

Thin film bonded to elastic orthotropic substrate under thermal loading / Falope, FEDERICO OYEDEJI; Lanzoni, Luca; Radi, Enrico; Tarantino, Angelo Marcello. - In: JOURNAL OF STRAIN ANALYSIS FOR ENGINEERING DESIGN. - ISSN 0309-3247. - ELETTRONICO. - 51 (4):(2016), pp. 256-269. [10.1177/0309324716642931]

Thin film bonded to elastic orthotropic substrate under thermal loading

FALOPE, FEDERICO OYEDEJI;LANZONI, Luca;RADI, Enrico;TARANTINO, Angelo Marcello
2016

Abstract

The problem of thin elastic films bonded on an elastic orthotropic substrate under thermal load is investigated in this work. Differently from past studies on the same topic, the effects induced by anisotropic behavior of the elastic substrate will be taken into account. Particular attention will also be paid to the determination of the displacement and stress fields induced by thermal loading. In particular, it is assumed that the thin films are deposed on the substrate at high temperature, and then the mismatch occurring during the cooling process, due to the difference between the thermal expansion coefficients of the two materials, is responsible for the permanent deformation assumed by the system. This phenomenon can be exploited for realizing a crystalline undulator. To this aim, the permanent deformation must be optimized in order to encourage the channeling phenomenon. By imposing equilibrium conditions and perfect adhesion between the film and the substrate, a singular integral equation is derived. A closed-form solution is achieved by expanding the interfacial shear stress fields in Chebyshev series. The unknown coefficients in the series expansion are then determined by transforming the integral equation into an infinite algebraic system.
51 (4)
256
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Thin film bonded to elastic orthotropic substrate under thermal loading / Falope, FEDERICO OYEDEJI; Lanzoni, Luca; Radi, Enrico; Tarantino, Angelo Marcello. - In: JOURNAL OF STRAIN ANALYSIS FOR ENGINEERING DESIGN. - ISSN 0309-3247. - ELETTRONICO. - 51 (4):(2016), pp. 256-269. [10.1177/0309324716642931]
Falope, FEDERICO OYEDEJI; Lanzoni, Luca; Radi, Enrico; Tarantino, Angelo Marcello
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1101715
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