We propose a theoretical approach to the general problem of phonon-coupling between localised electronic states in semiconductors, which takes advantage of results from first-principles calculations. Application of this scheme to the isolated antisite defect As(Ga) in GaAs reveals that electron-phonon coupling can provide the mechanism for the metastable transition characteristic of EL2.

METASTABLE TRANSITION OF EL2 IN GAAS - THE ELECTRON-PHONON-COUPLING CHANNEL / Caldas, Mj; Molinari, Elisa. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 89:(1994), pp. 493-496.

METASTABLE TRANSITION OF EL2 IN GAAS - THE ELECTRON-PHONON-COUPLING CHANNEL

MOLINARI, Elisa
1994

Abstract

We propose a theoretical approach to the general problem of phonon-coupling between localised electronic states in semiconductors, which takes advantage of results from first-principles calculations. Application of this scheme to the isolated antisite defect As(Ga) in GaAs reveals that electron-phonon coupling can provide the mechanism for the metastable transition characteristic of EL2.
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493
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METASTABLE TRANSITION OF EL2 IN GAAS - THE ELECTRON-PHONON-COUPLING CHANNEL / Caldas, Mj; Molinari, Elisa. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 89:(1994), pp. 493-496.
Caldas, Mj; Molinari, Elisa
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/10796
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