The aim of this work is to quantitatively investigate the influence of buffer doping on the current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the increase in current collapse detected after reverse-bias stress. The study was carried out on GaN-based HEMTs with increasing levels of iron doping in the buffer, which were submitted to drain current transient measurements and reverse-bias stress. Results demonstrate that the use of Fe-doping may significantly impact on current collapse; moreover, we demonstrate that the increase in current collapse detected after reverse-bias stress is not due to the generation of new types of defect, but to the increase in the signal of the defects which were already present before stress.
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs / Meneghini, M.; Rossetto, I.; Bisi, D.; Stocco, A.; Cester, A.; Meneghesso, G.; Zanoni, E.; Chini, Alessandro; Pantellini, A.; Lanzieri, C.. - ELETTRONICO. - (2014), pp. 6C.6.1-6C.6.7. (Intervento presentato al convegno IEEE International Reliability Physics Symposium, 2014 tenutosi a Hilton Waikoloa Village Waikoloa, HI, USA nel 1-5 June 2014) [10.1109/IRPS.2014.6861113].
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs
CHINI, Alessandro;
2014
Abstract
The aim of this work is to quantitatively investigate the influence of buffer doping on the current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the increase in current collapse detected after reverse-bias stress. The study was carried out on GaN-based HEMTs with increasing levels of iron doping in the buffer, which were submitted to drain current transient measurements and reverse-bias stress. Results demonstrate that the use of Fe-doping may significantly impact on current collapse; moreover, we demonstrate that the increase in current collapse detected after reverse-bias stress is not due to the generation of new types of defect, but to the increase in the signal of the defects which were already present before stress.
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