In thisworkwestudiedtheinfluence oftheannealingtreatmentsofasol–gel derivedZnOelectron transport layerdepositedonITOsubstrate,ontheperformancesofinvertedbulkheterojunctionpolymer solar cellsusingablendofpoly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b;4,5-b′]dithiophene)-2,6-diyl-alt- (4-(2-ethylhexanoyl)-thieno[3,4-b]thiopene)-2,6-diyl] and[6,6]-phenylC71 butyric acidmethylester. Since theannealingtreatmentsneededtocompletetheformationofthesolution-processedZnO film can modify theunderlyingITOelectrode,weanalyzedtheperformanceofthefabricatedcellsintermsofthe properties ofITOandZnO films. WefoundalinearrelationshipbetweenthesheetresistanceoftheITO layerandtheseriesresistanceofthecorrespondingdevice,whichstronglyinfluences the fill factor.The best powerconversionefficiency (7%)undersimulatedAM1.5Gilluminationof100mW/cm2 was achieved forthepolymersolarcellfabricatedusingaZnO film annealedat150 °C foronly5min.Higher annealing temperaturesandtimesincreasethesheetresistanceoftheITOworseningthedeviceper- formances.

Influence of annealing treatments on solution-processed ZnO film deposited on ITO substrate as electron transport layer for inverted polymer solar cells / Morvillo, P.; Diana, R.; Mucci, Adele; Bobeico, E.; Ricciardi, R.; Minarini, C.. - In: SOLAR ENERGY MATERIALS AND SOLAR CELLS. - ISSN 0927-0248. - STAMPA. - 141(2015), pp. 210-217. [10.1016/j.solmat.2015.05.038]

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