In this paper a theoretical-evaluation is given of the absolute intensity and polarization of light emission from silicon devices due to conduction-conduction (c-c) and valence-valence (v-v) direct transitions. The matrix elements of the momentum operator between Bloch states have been obtained from a full band-structure calculation performed with the pseudopotential method. Results have been obtained by using both analytical model distribution functions and realistic hot-carrier distributions obtained from Monte Carlo (MC) simulations based on the same band model. They show a polarization degree of a few per cent, which should be observable for these transitions.
POLARIZATION ANALYSIS OF HOT-CARRIER LIGHT-EMISSION IN SILICON / Carbone, L; Brunetti, Rossella; Jacoboni, Carlo; Lacaita, A; Fischetti, M.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 9:(1994), pp. 674-676.
POLARIZATION ANALYSIS OF HOT-CARRIER LIGHT-EMISSION IN SILICON
BRUNETTI, Rossella;JACOBONI, Carlo;
1994
Abstract
In this paper a theoretical-evaluation is given of the absolute intensity and polarization of light emission from silicon devices due to conduction-conduction (c-c) and valence-valence (v-v) direct transitions. The matrix elements of the momentum operator between Bloch states have been obtained from a full band-structure calculation performed with the pseudopotential method. Results have been obtained by using both analytical model distribution functions and realistic hot-carrier distributions obtained from Monte Carlo (MC) simulations based on the same band model. They show a polarization degree of a few per cent, which should be observable for these transitions.
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