We analyse the effects of a non-equilibrium phonon population on noise and diffusion phenomena in polar semiconductors. We calculate the current and energy autocorrelation functions and the current-energy cross-correlation functions, for both the case with and without hot-phonon effects. Owing to the presence of hot phonons, we find an increase of the noise equivalent temperature and of the longitudinal diffusion coefficient at intermediate field strengths below the threshold for negative differential mobility.
HOT-PHONON EFFECT ON NOISE AND DIFFUSION IN GAAS / Bordone, Paolo; Reggiani, L; Varani, L; Kuhn, T.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 9:(1994), pp. 623-626.
HOT-PHONON EFFECT ON NOISE AND DIFFUSION IN GAAS
BORDONE, Paolo;
1994
Abstract
We analyse the effects of a non-equilibrium phonon population on noise and diffusion phenomena in polar semiconductors. We calculate the current and energy autocorrelation functions and the current-energy cross-correlation functions, for both the case with and without hot-phonon effects. Owing to the presence of hot phonons, we find an increase of the noise equivalent temperature and of the longitudinal diffusion coefficient at intermediate field strengths below the threshold for negative differential mobility.
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