The hydrodynamic model for the trap-limited conduction regime in amorphous materials, used in the description of phase-change memory devices, is re-examined from the viewpoint of numerical efficiency. Among other features, the approach presented here avoids the calculation of integrals involving the distribution function during the iterative solution, and makes the proposed solution scheme suitable for incorporation into general-purpose device simulators.
Efficient Numerics for Thermally-Assisted trap-limited Conduction in Chalcogenides / Piccinini, Enrico; Rudan, Massimo; Buscemi, Fabrizio; Brunetti, Rossella. - STAMPA. - (2014), pp. 126-129. (Intervento presentato al convegno 44th European Solid-State Device Research Conference, ESSDERC 2014 tenutosi a Venezia nel 22-26 Sept. 2014) [10.1109/ESSDERC.2014.6948774].
Efficient Numerics for Thermally-Assisted trap-limited Conduction in Chalcogenides
BUSCEMI, Fabrizio;BRUNETTI, Rossella
2014
Abstract
The hydrodynamic model for the trap-limited conduction regime in amorphous materials, used in the description of phase-change memory devices, is re-examined from the viewpoint of numerical efficiency. Among other features, the approach presented here avoids the calculation of integrals involving the distribution function during the iterative solution, and makes the proposed solution scheme suitable for incorporation into general-purpose device simulators.
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