2D vs. 3D behaviour of free-carriers gas in delta-doped p-type GaAs(100).

Biagi, Roberto; DEL PENNINO, Umberto

The free-carrier-induced plasma excitation in delta-doped p-type GaAs(001) has been studied by means of high-resolution electron-energy-loss spectroscopy (HREELS). Several samples, with different values of doping and depth of the dopant layer, have been investigated at various primary-beam energies. The HREEL spectra show a strong dependence on the doping level. We were able to reproduce satisfactorily all the measured spectra using a suitable dielectric model of a classically confined free-carrier gas, pointing out the two-dimensional character of the free-carrier gas in the samples having the two lowest dopings. On the contrary, a characteristic three-dimensional behavior of the plasma excitation is exhibited by the most doped sample.

Data di pubblicazione:	1994
Titolo:	2D vs. 3D behaviour of free-carriers gas in delta-doped p-type GaAs(100).
Autore/i:	Biagi, Roberto; DEL PENNINO, Umberto
Autore/i UNIMORE:	BIAGI, Roberto DEL PENNINO, Umberto
Rivista:	PHYSICAL REVIEW. B, CONDENSED MATTER
Volume:	50
Pagina iniziale:	7573
Pagina finale:	7581
Codice identificativo ISI:	WOS:A1994PJ43700042
Codice identificativo Scopus:	2-s2.0-0001428474
Citazione:	2D vs. 3D behaviour of free-carriers gas in delta-doped p-type GaAs(100) / Biagi, Roberto; DEL PENNINO, Umberto. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 50(1994), pp. 7573-7581.
Tipologia	Articolo su rivista

File in questo prodotto:

Non ci sono file associati a questo prodotto.

Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11380/10478

Citazioni

I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris