The free-carrier-induced plasma excitation in delta-doped p-type GaAs(001) has been studied by means of high-resolution electron-energy-loss spectroscopy (HREELS). Several samples, with different values of doping and depth of the dopant layer, have been investigated at various primary-beam energies. The HREEL spectra show a strong dependence on the doping level. We were able to reproduce satisfactorily all the measured spectra using a suitable dielectric model of a classically confined free-carrier gas, pointing out the two-dimensional character of the free-carrier gas in the samples having the two lowest dopings. On the contrary, a characteristic three-dimensional behavior of the plasma excitation is exhibited by the most doped sample.
2D vs. 3D behaviour of free-carriers gas in delta-doped p-type GaAs(100) / Biagi, Roberto; DEL PENNINO, Umberto. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 50:(1994), pp. 7573-7581.
2D vs. 3D behaviour of free-carriers gas in delta-doped p-type GaAs(100).
BIAGI, Roberto;DEL PENNINO, Umberto
1994-01-01
Abstract
The free-carrier-induced plasma excitation in delta-doped p-type GaAs(001) has been studied by means of high-resolution electron-energy-loss spectroscopy (HREELS). Several samples, with different values of doping and depth of the dopant layer, have been investigated at various primary-beam energies. The HREEL spectra show a strong dependence on the doping level. We were able to reproduce satisfactorily all the measured spectra using a suitable dielectric model of a classically confined free-carrier gas, pointing out the two-dimensional character of the free-carrier gas in the samples having the two lowest dopings. On the contrary, a characteristic three-dimensional behavior of the plasma excitation is exhibited by the most doped sample.
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