The free-carrier-induced plasma excitation in delta-doped p-type GaAs(001) has been studied by means of high-resolution electron-energy-loss spectroscopy (HREELS). Several samples, with different values of doping and depth of the dopant layer, have been investigated at various primary-beam energies. The HREEL spectra show a strong dependence on the doping level. We were able to reproduce satisfactorily all the measured spectra using a suitable dielectric model of a classically confined free-carrier gas, pointing out the two-dimensional character of the free-carrier gas in the samples having the two lowest dopings. On the contrary, a characteristic three-dimensional behavior of the plasma excitation is exhibited by the most doped sample.

2D vs. 3D behaviour of free-carriers gas in delta-doped p-type GaAs(100) / BIAGI, Roberto; DEL PENNINO, Umberto. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 50(1994), pp. 7573-7581.

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