Achieving significant doping in GaAs/AlAs core/ shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an unintentional p-type doping. Magneto-optical studies of such a GaAs/AlAs core−multishell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/ shell interface due to the presence of ionized carbon acceptors in the 1 nm GaAs layer in the shell. Microphotoluminescence in high magnetic field shows a clear signature of avoided crossings of the n = 0 Landau level emission line with the n = 2 Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole density in the structure

Unintentional High-Density p‑Type Modulation Doping of a GaAs/ AlAs Core−Multishell Nanowire / J., Jadczak; P., Plochocka; A., Mitioglu; I., Breslavetz; M., Royo; A., Bertoni; Goldoni, Guido; T., Smolenski; P., Kossacki; A., Kretinin; Hadas, Shtrikman; D. K., Maude. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 14:5(2014), pp. 2807-2814. [10.1021/nl500818k]

Unintentional High-Density p‑Type Modulation Doping of a GaAs/ AlAs Core−Multishell Nanowire

GOLDONI, Guido;
2014

Abstract

Achieving significant doping in GaAs/AlAs core/ shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an unintentional p-type doping. Magneto-optical studies of such a GaAs/AlAs core−multishell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/ shell interface due to the presence of ionized carbon acceptors in the 1 nm GaAs layer in the shell. Microphotoluminescence in high magnetic field shows a clear signature of avoided crossings of the n = 0 Landau level emission line with the n = 2 Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole density in the structure
2014
14
5
2807
2814
Unintentional High-Density p‑Type Modulation Doping of a GaAs/ AlAs Core−Multishell Nanowire / J., Jadczak; P., Plochocka; A., Mitioglu; I., Breslavetz; M., Royo; A., Bertoni; Goldoni, Guido; T., Smolenski; P., Kossacki; A., Kretinin; Hadas, Shtrikman; D. K., Maude. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 14:5(2014), pp. 2807-2814. [10.1021/nl500818k]
J., Jadczak; P., Plochocka; A., Mitioglu; I., Breslavetz; M., Royo; A., Bertoni; Goldoni, Guido; T., Smolenski; P., Kossacki; A., Kretinin; Hadas, Sht...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1013129
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