TRAN, HUYEN TRANG

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TRAN, HUYEN TRANG

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Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention

2025 Venkatesan, Prasanna; Padovani, Andrea; Fernandes, Lance; Ravikumar, Priyankka; Park, Chinsung; Tran, Huy; Wang, Zekai; Jayasankar, Hari; Garlapati, Amrit; Song, Taeyoung; Chen, Hang; Chern, Winston; Wang, Zheng; Kim, Kijoon; Woog, Jongho; Lim, Suhwan; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Yu, Shimeng; Dattal, Suman; Larcher, Luca; Thareja, Gaurav; Khanl, Asif

Titolo	Data di pubblicazione	Autore(i)	File
Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention	1-gen-2025	Venkatesan, Prasanna; Padovani, Andrea; Fernandes, Lance; Ravikumar, Priyankka; Park, Chinsung; Tran, Huy; Wang, Zekai; Jayasankar, Hari; Garlapati, Amrit; Song, Taeyoung; Chen, Hang; Chern, Winston; Wang, Zheng; Kim, Kijoon; Woog, Jongho; Lim, Suhwan; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Yu, Shimeng; Dattal, Suman; Larcher, Luca; Thareja, Gaurav; Khanl, Asif