Several groups have demonstrated nitride-based High Electron Mobility Transistors (HEMTs) with excellent rf output power and with constant increase in performances. However, despite the large effort spent in the last few years, and the progress in MTTF (mean time to failure) values, reliability of GaN HEMTs still has to be fully demonstrated, due to the continuous evolution of adopted process and technologies. This paper analyses the effects of accelerated DC tests at different temperatures in static and dynamic characteristics.
Trap analysis on GaN HEMT after DC accelerated tests / Stocco, A.; Ronchi, N.; Zanon, F.; Zanoni, E.; Meneghesso, G.; Chini, Alessandro; Peroni, M.. - (2009). (Intervento presentato al convegno 18th European Workshop on Heterostructure Technology - HETECH 2009 tenutosi a Günzburg / Ulm, Germany nel 2-4 November 2009).
Trap analysis on GaN HEMT after DC accelerated tests
CHINI, Alessandro;
2009
Abstract
Several groups have demonstrated nitride-based High Electron Mobility Transistors (HEMTs) with excellent rf output power and with constant increase in performances. However, despite the large effort spent in the last few years, and the progress in MTTF (mean time to failure) values, reliability of GaN HEMTs still has to be fully demonstrated, due to the continuous evolution of adopted process and technologies. This paper analyses the effects of accelerated DC tests at different temperatures in static and dynamic characteristics.
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