Microstructural analysis of RuO2-basede thick-film resistors

This paper presents results of a microstructural analysis on RuO2-based Thick Film Resistors performed by X.ray diffraction and absorption spectroscopy. The study concerns four different types of RuO2-based TFRS, prepared changing the substrate, the glass of matrix and the vehicle but keeping the RUO2 powder fixed. In addition each type has been fired at different temperatures, ranging from 450 deg. C up to 1000 deg. C . The collected data clearly indicated that changes in resistivity are directly related to structural modification of the glass matrix and a consistent interaction with the alumina substrate exists. On the contrary firing temperature and substrates have minor effects on RuO2 conductive phase.