In this paper we will present an experimental characterization of AlGaN/GaN HEMTs grown on SopSiC composite substrates. Tested devices yielded breakdown voltages up to 90 V (on-state) and 300 V(off-state), power densities up to 4 W/mm and power added efficiencies up to 54%. These results clearly suggest that the adopted composite substrate represent a very promising solution for the fabrication of low-cost high-power microwave transistors for wireless communication systems.
High Power Performances of GaN HEMT on SOPSIC substrate / Zanon, F., Danesin, F., Tazzoli, A., Montanari, G., Chini, A., Thorpe, J., Gaquière, C., Meneghesso, G., Zanoni, E.. - (2008). (32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008 Leuven (Belgium) 18-21 May, 2008).
High Power Performances of GaN HEMT on SOPSIC substrate
CHINI, Alessandro;
2008
Abstract
In this paper we will present an experimental characterization of AlGaN/GaN HEMTs grown on SopSiC composite substrates. Tested devices yielded breakdown voltages up to 90 V (on-state) and 300 V(off-state), power densities up to 4 W/mm and power added efficiencies up to 54%. These results clearly suggest that the adopted composite substrate represent a very promising solution for the fabrication of low-cost high-power microwave transistors for wireless communication systems.
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