In this paper we will present an experimental characterization of AlGaN/GaN HEMTs grown on SopSiC composite substrates. Tested devices yielded breakdown voltages up to 90 V (on-state) and 300 V(off-state), power densities up to 4 W/mm and power added efficiencies up to 54%. These results clearly suggest that the adopted composite substrate represent a very promising solution for the fabrication of low-cost high-power microwave transistors for wireless communication systems.
High Power Performances of GaN HEMT on SOPSIC substrate / Zanon, F.; Danesin, F.; Tazzoli, A.; Montanari, G.; Chini, Alessandro; Thorpe, J.; Gaquière, C.; Meneghesso, G.; Zanoni, E.. - (2008). (Intervento presentato al convegno 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008 tenutosi a Leuven (Belgium) nel 18-21 May, 2008).
High Power Performances of GaN HEMT on SOPSIC substrate
CHINI, Alessandro;
2008
Abstract
In this paper we will present an experimental characterization of AlGaN/GaN HEMTs grown on SopSiC composite substrates. Tested devices yielded breakdown voltages up to 90 V (on-state) and 300 V(off-state), power densities up to 4 W/mm and power added efficiencies up to 54%. These results clearly suggest that the adopted composite substrate represent a very promising solution for the fabrication of low-cost high-power microwave transistors for wireless communication systems.
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