HEMT晶体管包括具有半导体异质结构的半导体主体。导电材料的栅极区域被布置在半导体主体上并且与半导体主体接触。第一绝缘层在半导体主体之上侧向延伸到导电栅极区域。第二绝缘层在第一绝缘层和栅极区域之上延伸。导电材料的第一场板区域在第一绝缘层与第二绝缘层之间延伸,沿着第一方向与导电栅极区域侧向分离。导电材料的第二场板区域在第二绝缘层之上延伸,并且第二场板区域覆盖第一场板区域并与第一场板区域垂直对齐。

The HEMT transistor includes a semiconductor body having a semiconductor heterostructure. A gate region of conductive material is disposed on and in contact with the semiconductor body. The first insulating layer extends laterally over the semiconductor body to the conductive gate region. The second insulating layer extends over the first insulating layer and the gate region. A first field plate region of conductive material extends between the first and second insulating layers, laterally separated from the conductive gate region along a first direction. A second field plate region of conductive material extends over the second insulating layer and overlies and is vertically aligned with the first field plate region.

包括场板区域的hemt晶体管及其制造工艺 / Iucolano, Ferdinando; Chini, Alessandro. - (2020 Dec 10).

包括场板区域的hemt晶体管及其制造工艺

Alessandro Chini
2020

Abstract

The HEMT transistor includes a semiconductor body having a semiconductor heterostructure. A gate region of conductive material is disposed on and in contact with the semiconductor body. The first insulating layer extends laterally over the semiconductor body to the conductive gate region. The second insulating layer extends over the first insulating layer and the gate region. A first field plate region of conductive material extends between the first and second insulating layers, laterally separated from the conductive gate region along a first direction. A second field plate region of conductive material extends over the second insulating layer and overlies and is vertically aligned with the first field plate region.
10-dic-2020
STMicroelectronics SRL
CN112951908A
Internazionale
Iucolano, Ferdinando; Chini, Alessandro
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1256186
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