The large-signal RF power performance of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is studied starting from technology computer-aided design (TCAD) simulations in terms of DC characteristic and S parameters. A clear procedure of physical parameters calibration is described. Trapping effects and GaN mobility model are included. Good agreement between simulations and measurements is reported, giving a meaningful starting point for the large signal model with the aim to optimize the efficiency of GaN HEMTs. The large signal model extracted is crucial to predict the device performance and give an essential contribution for the device maturity at industrial level.
From T-CAD simulations to large signal model for GaN RF device / Cerantonio, V.; Giuffrida, M.; Miccoli, C.; Chini, A.; Iucolano, F.. - (2020). (Intervento presentato al convegno 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive, AEIT AUTOMOTIVE 2020 tenutosi a ita nel 2020) [10.23919/aeitautomotive50086.2020.9307389].
From T-CAD simulations to large signal model for GaN RF device
Chini A.;
2020
Abstract
The large-signal RF power performance of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is studied starting from technology computer-aided design (TCAD) simulations in terms of DC characteristic and S parameters. A clear procedure of physical parameters calibration is described. Trapping effects and GaN mobility model are included. Good agreement between simulations and measurements is reported, giving a meaningful starting point for the large signal model with the aim to optimize the efficiency of GaN HEMTs. The large signal model extracted is crucial to predict the device performance and give an essential contribution for the device maturity at industrial level.
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