在断态期间具有高应力顺应性的hemt晶体管及其制造方法

本公开涉及在断态期间具有高应力顺应性的HEMT晶体管及其制造方法。HEMT包括缓冲层、缓冲层上的空穴供应层、空穴供应层上的异质结构、以及源极电极。空穴供应层由P型掺杂半导体材料制成，缓冲层掺杂有碳，并且源极电极与空穴供应层直接电接触，使得空穴供应层可以被偏置以促进空穴从空穴供应层到缓冲层的传输。

This disclosure relates to the HEMT transistor and its manufacturing method of high stress compliance during off-state.HEMT includes buffer layer, the hole accommodating layer on buffer layer, heterojunction structure and source electrode on the accommodating layer of hole.Hole accommodating layer is made of p-type doped semiconductor materials, and undoped buffer layer has carbon, and source electrode is directly in electrical contact with hole accommodating layer, allows transmission of the hole accommodating layer by biasing to promote hole from hole accommodating layer to buffer layer.