高电子迁移率晶体管

本公开涉及高电子迁移率晶体管。HEMT包括缓冲层、缓冲层上的空穴供应层、空穴供应层上的异质结构、以及源极电极。空穴供应层由P型掺杂半导体材料制成，缓冲层掺杂有碳，并且源极电极与空穴供应层直接电接触，使得空穴供应层可以被偏置以促进空穴从空穴供应层到缓冲层的传输。本公开的实施例使得能够在不降低击穿阈值以及在应力之前不增加通态电阻的值的情况下，消除应力对通态电阻的影响。

This disclosure relates to high electron mobility transistor.HEMT includes buffer layer, the hole accommodating layer on buffer layer, heterojunction structure and source electrode on the accommodating layer of hole.Hole accommodating layer is made of p-type doped semiconductor materials, and undoped buffer layer has carbon, and source electrode is directly in electrical contact with hole accommodating layer, allows transmission of the hole accommodating layer by biasing to promote hole from hole accommodating layer to buffer layer.Embodiment of the disclosure makes it possible in the case where not reducing breakdown threshold and not increasing the value of on state resistance before stress, eliminates influence of the stress on state resistance.