常关断型hemt晶体管

本实用新型涉及常关断型HEMT晶体管。一种常关断型HEMT晶体管包括：半导体异质结(4、6、200)，其至少包括一个第一层(4)和一个第二层(6)，第二层布置在第一层的顶部上；沟槽(15)，其延伸穿过第二层和第一层的一部分；导电材料的栅极区(10)，其在沟槽中延伸；以及介电区(18)，其在沟槽中延伸，涂覆栅极区并且接触半导体异质结。沟槽的一部分由形成至少一个第一台阶(Pb1、Pl1、Pb2)的横向结构(LS)横向定界。半导体异质结形成第一台阶的第一边缘(E1)和第二边缘(E2)，第一边缘由第一层形成。

This utility model relates to normally-off type HEMT transistor.A kind of normally-off type HEMT transistor includes: heterojunction semiconductor (4,6,200), and it at least includes a ground floor (4) and a second layer (6), and the second layer is arranged on the top of ground floor；Groove (15), it extends through a part for the second layer and ground floor；The gate regions (10) of conductive material, it extends in the trench；And dielectric regime (18), it extends in the trench, coats gate regions and contacts heterojunction semiconductor.A part for groove is by forming at least one first step (Pb1、Pl1、Pb2) transversary (LS) laterally delimit.Heterojunction semiconductor forms the first edge (E of first step1) and the second edge (E2), the first edge is formed by ground floor.