Electroluminescent organic transistor (1) in which there is a semiconductor heterostructure (12) constituted by a plurality of layers of semiconductor materials of p-type and n-type (15, 15', 15", 15"'), which act, respectively, for the conduction of holes and electrons within said heterostructure (12), and at least two layers of emitting materials (16, 16', 16") each of which is interposed between, and in direct contact with, one of said layers of p-type semiconductor material and one of said layers of n-type semiconductor material (15, 15', 15", 15"').
Electroluminescent Organic Transistor / Capelli, R; Muccini, M. - (2011).
Electroluminescent Organic Transistor
Capelli R;
2011-01-01
Abstract
Electroluminescent organic transistor (1) in which there is a semiconductor heterostructure (12) constituted by a plurality of layers of semiconductor materials of p-type and n-type (15, 15', 15", 15"'), which act, respectively, for the conduction of holes and electrons within said heterostructure (12), and at least two layers of emitting materials (16, 16', 16") each of which is interposed between, and in direct contact with, one of said layers of p-type semiconductor material and one of said layers of n-type semiconductor material (15, 15', 15", 15"').
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
