n organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination is described. The transistor has a gate electrode, a dielectric layer superposed to the gate electrode, an ambipolar channel superposed to the dielectric layer having a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCp and lowest unoccupied molecular orbital LUMO-SCp, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCn and lowest unoccupied molecular orbital LUMO-SCn and a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between the P-type semiconductor layer and the N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contract with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.
Organic Light Emitting Field Effect Ambipolar Transistor with Distributed Light Emission / Capelli, R; Toffanin, S; Generali, G; Muccini, M. - (2012).
|Data di pubblicazione:||2012|
|Titolo:||Organic Light Emitting Field Effect Ambipolar Transistor with Distributed Light Emission|
|Autore/i:||Capelli, R; Toffanin, S; Generali, G; Muccini, M|
|Numero di deposito:||US201314373225 20130221|
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